1. product profile 1.1 general description a 5 w ldmos power transistor for broadcast and industrial applications in the hf to 2500 mhz band. [1] measured at ? =10%, t p =12 ? s. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? high power gain ? designed for broadband operation (hf to 2500 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications BLP25M705 broadband ldmos driver transistor rev. 1 ? 15 august 2013 product data sheet table 1. application information test signal f i dq v ds p l g p ? d (mhz) (ma) (v) (w) (db) (%) pulsed rf [1] 2450 50 28 5 15.8 41.4
BLP25M705 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 15 august 2013 2 of 9 nxp semiconductors BLP25M705 broadband ldmos driver transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1, 4, 5, 6, 7, 8, 9, 12 n.c. 2, 3 gate 10, 11 drain 13 source [1] 7 u d q v s d u h q w w r s y l h z d d d table 3. ordering information type number package name description version BLP25M705 hvson12 plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 6 ? 4 ? 0.85 mm sot1179-2 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c
BLP25M705 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 15 august 2013 3 of 9 nxp semiconductors BLP25M705 broadband ldmos driver transistor 5. recommended operating conditions see application note an11198 for more details. 6. thermal characteristics [1] r th(j-c) is measured under rf conditions. 7. characteristics fig 1. recommended operating area; case temperature as a function of power dissipation d d d 3 : 7 f d v h f d v h 7 f d v h ? & |